smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 FMMT4400 features general purpose transistors. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6v collector current i c 600 ma power dissipation p tot 330 mw operating and storage temperature range t j, t stg -55to+150 marking marking 1kz electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =0.1ma 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma 40 v emitter-base breakdown voltage v (br)ebo i e =0.1ma 6v collector-emitter cut-off current i cex v ce =35v v eb(off) =0.4v 0.1 a base cut-off current i bex v ce =35v v eb(off) =3v 0.1 a dc current gain * h fe i c =150ma, v ce =1v 50 150 collector-emitter saturation voltage * v ce( sat) i c =150ma,i b =15ma i c =500ma,i b =50ma 0.4 0.75 v base-emitter saturation voltage * v be( sat) i c =150ma,i b =15ma i c =500ma,i b =50ma 0.75 0.95 1.2 v current-gain-bandwidth product f t i c =20ma, v ce =10v f=100khz 200 mhz output capacitance c obo v cb =5v, i e =0, f=100khz 6.5 pf input capacitance c ibo v be =0.5v, i c =0, f=100khz 30 pf delay time t on v cc =30v, i c =150ma,i b1 =15ma v be(off) =2v 35 ns storage time t off v cc =30v, i c =150ma i b1 =i b2 =15ma 255 ns * pulse test: tp 300 s; d 0.02. smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type smd type ic smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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